Atomic Structure
Fabrication
Design
Physical Design
Application
100

p-type silicon has more holes

Which type silicon has more holes.

100

Twin tub process is a VLSI fabrication process.

What is twin tub process

100

Explanation: Conducting layer is separated from the substrate by using dielectric or insulating layer as both are electrical insulators that can be polarized by an applied electric field.

Conducting layer is separated from substrate using

100

Explanation: Gate to channel capacitance of 5 micron technology is 4 pF X 10(-4) (micrometer)2. It is the standard typical calculated value.  

 Gate to channel capacitance of 5 micron technology is _____ pF X 10(-4) (micrometer)2.

100


Explanation: Area capacitane of diffusion region of 2 micron technology is 3.75 pF X 10(-4) (micrometer)2.

technology is _____ pF X 10(-4) (micrometer)2

200

Explanation: The relative capacitance of diffusion region of 5 micron technology is 0.25. The relative value is calculated by comparing two values of same type.

What is the relative capacitance of diffusion region of 5 micron technology?

200


Explanation: A feature size square has L = W and its gate to channel capacitance value is called as square Cg.

A feature size square has ___________

200

Explanation: Relative area for L = 20λ and W = 3λ is = (20λ X 3λ) / (2λ X 2λ) = 15. Relative area has no unit as two quantities of same type have been used.

 Relative area for L = 20λ and W = 3λ is?

200

Explanation: The transition point of an inverter is 0.5 Vdd. The transition point is the point where different phases of same substance can be obtained in equilibrium.

What is the transition point of an inverter?

200

Explanation: The desired or safe delay value for 5 micron technology is 0.3 nsec.

What is the desired or safe delay value for 5 micron technology?

M
e
n
u